Precursor, thin layer prepared including the precursor,...

Details Precursor, thin layer prepared including the precursor,... Precursor, thin layer prepared including the precursor,...

2008-04-04

2010-06-01

Gonzalez, Porfirio Nazario (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Selenium or tellurium containing

C427S255280, C257S040000

Reexamination Certificate

active

07728172

ABSTRACT:
A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te precursor may be deposited at lower temperatures for forming a Te-containing chalcogenide thin layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si). For example, the Te precursor may employ plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) at lower deposition temperatures. The GST phase-change layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si) formed by employing the Te precursor may have a decreased reset current, and thus when a memory device including the same is employed, its integration may be possible, and operation with higher capacity and/or higher speed may be possible.

REFERENCES:
patent: 6752869 (2004-06-01), Lee et al.
patent: 2003/0185981 (2003-10-01), Min et al.
patent: 2006/0049447 (2006-03-01), Lee et al.
patent: 2006/0138393 (2006-06-01), Seo et al.
patent: 1067595 (2001-01-01), None
patent: 2002-0084616 (2002-11-01), None
patent: 10-2003-0058595 (2003-07-01), None
patent: 1020040076225 (2004-08-01), None
patent: 10-2004-0100499 (2004-12-01), None
Korean Office Action dated Jul. 20, 2006 with English translation.
Bunton et al., IEEE Transaction on Electron Devices, vol. ED-20, No. 2, pp. 140-144 (1973).
Liu et al., Semiconductor Science and Technology, vol. 19, pp. L61-L64 (2004).
Björgvinsson et al., Inorganic Chemistry, vol. 29, No. 26, pp. 5140-5143 (1990).

Affiliated with

Also associated with

Rating

Precursor, thin layer prepared including the precursor,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Precursor, thin layer prepared including the precursor,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Precursor, thin layer prepared including the precursor,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4159246