Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1996-12-03
1999-10-26
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438369, 438914, H01L 21338, H01L 21331
Patent
active
059727438
ABSTRACT:
A method for n-doping a material layer with antimony, comprising ion implanting antimony from an antimony precursor composition including a compound of the formula SbX.sub.n ((CH.sub.2).sub.y SiR.sub.3).sub.n-3, wherein: n is an integer having a value of 1 or 2; y is an integer having a value of from 1 to 3 inclusive; each R is independently selected from C.sub.1 -C.sub.4 alkyl; and each X is independently selected from halo substituents. The antimony precursor composition may further include a fluorine-containing auxiliary gas, to effect in situ cleaning of the ionization chamber during ion implantation.
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Baum Thomas H.
Glassman Timothy E.
McManus James V.
Olander W. Karl
Advanced Technology & Materials Inc.
Hultquist Steven J.
Jones Josetta I.
Niebling John F.
Zitzmann Oliver A. M.
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