Precursor compositions for atomic layer deposition and...

Chemistry of carbon compounds – Miscellaneous organic carbon compounds – C-metal

Reexamination Certificate

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C427S255280, C106S286600

Reexamination Certificate

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07638074

ABSTRACT:
Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12alkyl, C1-C12amino, C6-C10aryl, C1-C12alkoxy, C3-C6alkylsilyl, C2-C12alkenyl, R1R2R3NNR3, wherein R1, R2and R3may be the same as or different from one another and each is independently selected from hydrogen and C1-C6alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

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