Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-04-24
2007-04-24
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S794000, C257SE21493, C257SE23167, C427S255180, C556S400000
Reexamination Certificate
active
10643110
ABSTRACT:
Metalorganic precursors of the formula:in-line-formulae description="In-line Formulae" end="lead"?(R1R2N)a−bMXbin-line-formulae description="In-line Formulae" end="tail"?wherein: M is the precursor metal center, selected from the group of Ta, Ti, W, Nb, Si, Al and B; a is a number equal to the valence of M; 1≦b≦(a−1); R1and R2can be the same as or different from one another, and are each independently selected from the group of H, C1–C4alkyl, C3–C6cycloalkyl, and R03Si, where each R0can be the same or different and each R0is independently selected from H and C1–C4alkyl; and X is selected from the group of chlorine, fluorine, bromine and iodine. Precursors of such formula are useful for chemical vapor deposition (MOCVD) of conductive barrier materials in the manufacture of microelectronic device structures, e.g., by atomic layer chemical vapor deposition on a substrate bearing nitrogen-containing surface functionality. Further described is a method of forming Si3N4on a substrate at low temperature, e.g., using atomic layer chemical vapor deposition (ALCVD).
REFERENCES:
patent: 3467686 (1969-09-01), Creamer
patent: 4499198 (1985-02-01), Pullukat et al.
patent: 4783430 (1988-11-01), Su
patent: 4788309 (1988-11-01), Laine et al.
patent: 5578530 (1996-11-01), Muroyama et al.
patent: 5603988 (1997-02-01), Shapiro et al.
patent: 5675028 (1997-10-01), Neumayer et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6352921 (2002-03-01), Han et al.
patent: 6379748 (2002-04-01), Bhandari et al.
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6552209 (2003-04-01), Lei et al.
patent: 6786936 (2004-09-01), Vaartstra
patent: 2002/0081385 (2002-06-01), Kron et al.
patent: 2002/0175393 (2002-11-01), Baum et al.
patent: 2002/0187644 (2002-12-01), Baum et al.
patent: 2000036473 (2000-02-01), None
Baum Thomas H.
Hendrix Bryan C.
Roeder Jeffrey F.
Xu Chongying
Advanced Technology & Materials Inc.
Chappuis Margaret
Everhart Caridad
Hultquist Steven J.
Intellectual Property / Technology Law
LandOfFree
Precursor compositions and processes for MOCVD of barrier... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Precursor compositions and processes for MOCVD of barrier..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Precursor compositions and processes for MOCVD of barrier... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3724469