Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-08-27
2000-05-16
Meeks, Timothy
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438686, 438758, 438778, 427576, 427584, 427252, 427253, 42725531, C23C 1616, C23C 1618
Patent
active
060637056
ABSTRACT:
A method is provided for forming a film of ruthenium or ruthenium oxide on the surface of a substrate by employing the techniques of chemical vapor deposition to decompose precursors of ruthenium having the formula: L.sub.y RuX.sub.z where L is a neutral or monoanionic ligand selected from the group consisting essentially of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes; fluorinated derivatives thereof; derivatives thereof additionally containing heteroatoms such as a halide, Si, S, Se, P, As, N or O; and combinations thereof; where X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitriles, isonitriles, trialkylphosphines, trialkylphosphites, trialkylamines, and isocyanide, and where subscripts y and z have a value of from one (1) to three (3); or L.sub.1 Ru(CO).sub.4 where L is a neutral or monoanionic ligand selected from the group including linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic dienes, and bicyclic trienes.
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Meeks Timothy
Micro)n Technology, Inc.
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