Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-01-18
2005-01-18
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S775000, C438S778000, C438S905000
Reexamination Certificate
active
06844273
ABSTRACT:
A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel2is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
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Endo Atsushi
Fukushima Kohei
Kato Hitoshi
Kumagai Takeshi
Nishita Tatsuo
Guerrero Maria F.
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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