Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Patent
1997-02-18
1998-11-17
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
257306, 257307, 257754, 257756, 257774, 257920, H01L 2710
Patent
active
058380329
ABSTRACT:
Capacitor arrays may be incorporated within silicon integrated circuits as part of analog-to-digital or digital-to-analog converters. Capacitance ratios between individual capacitors need to be controlled to better than 1%. Because of microloading effects during etching, the areas of the electrodes of the capacitors located along the edges of the array have tended to be slightly less than the areas of electrodes located completely inside the array. The present invention solves this problem by providing additional electrodes located along the periphery of the array, spaced the same distance away from the array edge as the spacing between electrodes inside the array.
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patent: 5391914 (1995-02-01), Sullivan et al.
patent: 5396092 (1995-03-01), Peek
patent: 5404045 (1995-04-01), Mizushima
Ackerman Stephen B.
Martin-Wallace Valencia
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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