Precharging the write path of an MRAM device for fast write...

Details Precharging the write path of an MRAM device for fast write... Precharging the write path of an MRAM device for fast write...

2006-06-06

2006-06-06

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000

Reexamination Certificate

active

07057924

ABSTRACT:
The write path of an MRAM device is precharged before starting a write operation of a magnetic memory cell, increasing the speed of the write operation and decreasing the write cycle time. The reference wires are precharged, which provides better control over the wordline and bitline write pulses and results in shorter rise times. The precharge time can be hidden in the address decoding time or redundancy evaluation time. A circuit design for a global reference current generator is also described herein. A fast on circuit is also disclosed that increases the speed of precharging the reference wires.

REFERENCES:
patent: 6594176 (2003-07-01), Lammers
patent: 6657889 (2003-12-01), Subramanian et al.

Affiliated with

Also associated with

Rating

Precharging the write path of an MRAM device for fast write... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Precharging the write path of an MRAM device for fast write..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Precharging the write path of an MRAM device for fast write... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3684386