Pre-written volatile memory cell

Details Pre-written volatile memory cell Pre-written volatile memory cell

2007-10-30

2007-10-30

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S226000

Reexamination Certificate

active

11261396

ABSTRACT:
A memory cell of the SRAM type is provided that is capable of storing one datum in a non-volatile manner. The memory cell includes two inverters (20and21) configured as a flip-flop for storing one bit. Each inverter includes a transistor (24or26) of a first type and a transistor (25or27) of a second type. The concentration of carriers in the conduction channel of the transistor (24) of the first type of one of the inverters (20) is different from the concentration of carriers in the conduction channel of the transistor (26) of the first type of the other inverter (21) so that the inverters have different threshold voltages.

REFERENCES:
patent: 4821233 (1989-04-01), Hsieh
patent: 5239510 (1993-08-01), Hill
patent: 6750555 (2004-06-01), Satomi et al.
patent: 6862227 (2005-03-01), Yamaoka et al.
patent: 2003/0218218 (2003-11-01), Chaudhry et al.
patent: 0460691 (1991-12-01), None
patent: 1434237 (2004-06-01), None
patent: 63081974 (1988-04-01), None
Rabaey, Jan M. “Digital Integrated Circuits: a design persepctive” 1996, Prentice Hall Electronics and VLSI Series, XP002366019, pp. 126-127.

Affiliated with

Also associated with

Rating

Pre-written volatile memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pre-written volatile memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pre-written volatile memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3842366