Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-11
1998-09-22
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257295, 257296, 257768, 257769, 257915, 257741, 257750, H01L 31062, H01L 27108, H01L 2912, H01L 2348
Patent
active
058118519
ABSTRACT:
Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material. One embodiment of the present invention is a microelectronic structure comprising a supporting layer having a principal surface, and an adhesion layer overlying the principal surface of the supporting layer, wherein the adhesion layer comprises a top surface and an expanded, oxidized sidewall (e.g. TiO.sub.2 40). The structure further comprises a noble metal layer overlying the top surface of the adhesion layer, wherein the noble metal layer comprises a deformed area overlying the oxidized sidewall, and a high-dielectric-constant material layer overlying the noble metal layer. The high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to the deformed area of the noble metal layer.
REFERENCES:
patent: 5187638 (1993-02-01), Sadhu et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5216572 (1993-06-01), Larson et al.
patent: 5312768 (1994-05-01), Gonzalez
Bhattacharya Pijush
Nishioka Yasushiro
Park Kyung-Ho
Summerfelt Scott R.
Clark Jhihan B.
Donaldson Richard
Kesterson James
Petersen Bret J.
Saadat Mahshid D.
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