Pre-oxidizing high-dielectric-constant material electrodes

Details Pre-oxidizing high-dielectric-constant material electrodes Pre-oxidizing high-dielectric-constant material electrodes

1995-06-07

1996-09-10

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257751, 257768, 257769, 257915, 365145, H01L 27108, H01L 2943, G11C 1122

Patent

active

055548660

ABSTRACT:
Generally, according to the present invention, the sidewall of the adhesion layer (e.g. TiN 36) in a lower electrode is pre-oxidized after deposition of an unreactive noble metal layer (e.g. Pt 38) but before deposition of an HDC material (e.g. BST 42). An important aspect of the present invention is that the pre-oxidation of the sidewall generally causes a substantial amount of the potential sidewall expansion (and consequent noble metal layer deformation) to occur before deposition of the HDC material. One embodiment of the present invention is a microelectronic structure comprising a supporting layer having a principal surface, and an adhesion layer overlying the principal surface of the supporting layer, wherein the adhesion layer comprises a top surface and an expanded, oxidized sidewall (e.g. TiO.sub.2 40). The structure further comprises a noble metal layer overlying the top surface of the adhesion layer, wherein the noble metal layer comprises a deformed area overlying the oxidized sidewall, and a high-dielectric-constant material layer overlying the noble metal layer. The high-dielectric-constant material layer is substantially free of expansion stress cracks in proximity to the deformed area of the noble metal layer.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4888733 (1989-12-01), Mobley
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 4910708 (1990-03-01), Eaton, Jr. et al.
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 4918654 (1990-04-01), Eaton, Jr. et al.
patent: 4982039 (1991-01-01), Shepherd
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5079200 (1992-01-01), Jackson
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5216572 (1993-06-01), Larson et al.
patent: 5385138 (1994-08-01), Sandhu et al.
A. F. Tasch, Jr. and L. H. Parker, "Memory Cell and Technology Issues for 64 and 256-Mbit One-Transistor Cell MOS DRAMs," Proceedings of the IEEE, vol. 77, No. 3, Mar. 1989, pp. 374-388.
K. Takemura, et al., "Barrier Mechanism of Pt/Ta and Pt/Ti Layers for SrTiO.sub.3 Thin Film Capacitors on Si," 4th Inter. Symp. on Integrated Ferroelectrics, C52 (1992) pp. 481-488.
T. Sakuma, S. Yamamichi, S. Matsubara, H. Yamaguchi, and Y. Miyasaka, "Barrier Layers for Realization of High Capacitance Density in SrTiO.sub.3 Thin-Film Capacitor on Silicon," Appl. Phys. Lett., 57 (23) 3 Dec. 1990, pp. 2431-2433.
M.-A. Nicolet, "Diffusion Barriers in Thin Films," Thin Solid Films, 52 (1978) 415-443.
M.-A. Nicolet, "Thin Film Diffusion Barrier for Metal-Semiconductor Contacts," Materials Research Society, 1987, pp. 19-26.
C. J. Brennan, "Characterization and Modelling of Thin-Film Ferroelectric Capacitors Using C-V Analysis," Proc. 3rd Inter. Symp. on Integrated Ferroelectrics, 354-363 (1991).
J. F. Scott, B. M. Melnick, C. A. Araujo, L. D. McMillan and R. Zuleeg, "D.C. Leakage Currents in Ferroelectric Memories," Proc. 3rd Inter. Symp. on Integrated Ferroelectrics, 176-184 (1991).
R. Waser and M. Klee, "Theory of Conduction and Breakdown in Perovskite Thin Films," Proc. 3rd Inster. Symp. on Integrated Ferroelectrics, 288-305 (1991).
P. D. Hren, H. N. Al-Shareef, S. H. Rou, A. I. Kingon, P. Buaud, and E. A. Irene, "Hillock Formation in Pt Films," Proc. MRS, 1992.
H. N. Al-Shareef, K. D. Gifford, P. D. Hren, S. H. Rou, O. Auciello, and A. I. Kingon, "Bottom Electrodes for Ferroelectric Thin Films," 1992.
S. Saito and K. Kuramasu, "Plasma Etching of RuO.sub.2 Thin Films," Japn. J. Appl. Phys., vol. 31, 1992, pp. 135-138.
S. K. Dey and R. Zuleeg, "Processing and Parameters of Sol-Gel PZt Thin-Films for GaAs Memory Applications," Ferroelectrics, vol. 112, 1990, pp. 309-319.
C. Hanson, H. Beratan, R. Owen, M. Corbin, and S. McKenney, "Uncooled Thermal Imaging at Texas Instruments," SPIE, 1735, 17 (1992).
B. Kulwicki, A. Amin, H. R. Beratan, and C. M. Hanson, "Pyroelectric Imaging," ISAF, 92, (1992).
D. L. Polla, C.-P. Ye and T. Yamagawa, "Surface-Micromachined PbTiO.sub.3 Pyroelectric Detectors," Appl. Phys. Lett. 59, 1991, pp. 3539-3541
K. R. Bellur, H. N. Al.varies.Shareef, S. H. Rou, K. D. Gifford, O. Auciello, and A. I. Kingon, "Electrical Characterization of Sol-Gel Derived PZT Thin Films," 1992.
S. D. Bernstein, T. Y. Wong. Y. Kisler, and R. W. Tustison, "Fatigue of Ferroelectric PbZr.sub.x Ti.sub.y O.sub.3 Capacitors with Ru and Ruo{hd z Electrodes," J. Mat. Res., 8, 1993, pp. 12-13.
P. D. Hren, S. H. Rou, H. N. Al-Shareef, M. S. Ameen, O. Auciello, and A. I. Kingon, "Bottom Electrodes for Integrated Pb(Ar.sub.3 Ti)O.sub.3 Films," Integrated Ferroelectrics, vol. 2, No. 1-4, 1992.
K. Char, M. S. Colclough, T. H. Geballe, and K. E. Myers, "High T Superconductor-Normal-Superconductor Josephson Junctions Using CaRuO.sub.3 as the Metallic Barrier," Appl. Phys. Lett., 62, 1993, pp. 196-198.
Yasushiro Nishioka et al., "Time Dependant, Dielectric Breakdown Characteristivs of Ta.sub.2 O.sub.5 /SiO.sub.2 Double Layers," Journal of the Electrochemical Society, vol. 136, No. 3, Mar. 1989, pp. 872-873.
H. Jehn et al., "Surface and Interface Characterization of Heat-Treated(Ti,Al)N Coatings on High Speed Steel Substrates," Thin Solid Films, 153 (1987) 45-53.
Shigeaki Zaima et al.,"Conduction Mechanism of Leakage Current in Ta.sub.2 O.sub.5 Films on Si Prepared by LPCVD," Journal of the Electrochemical Society, vol. 137, No. 9, Sep. 1990, pp. 2876-2879.
Yasushiro Nishioka et al., "Influence of SiO.sub.2 at the Ta.sub.2 O.sub.5 /Si Interface on Dielectric Characteristics of Ta.sub.2 O.sub.6 Capacitors," Journal of Applied Physics, 61 (6), Mar. 15, 1987, pp. 2335-2338.
Shigeaki Zaima et al., "Preparation and Properties of Ta.sub.2 O.sub.5 Films by LPCVD for ULSI Application," Journal of the Electrochemical Society, vol. 137, No. 4, Apr. 1990, pp. 1297-1300.
G. Arlt, et al., "Dielectric Properties of Fine-Grained Barium Titanate Ceramics," Journal of Applied Physics, 58(4), Aug. 15, 1985, pp. 1619-1625.
Yoichi Miyasaka et al., "Dielectric Properties of Sputter-Deposited BaTiO.sub.3 -SrTiO.sub.3 Thin Films," 19990 IEEE 7th International Symposium on Applications of Ferroelectrics, IEEE (1991), pp. 121-124.
Q. X. Jia et al., "Reactively Sputtered RuO.sub.2 Thin Film Resistor With Near Zero Temperature Coefficient of Resistance," Thin Solid Films, 196 (1991) pp. 29-34.
T. Eimore, et al., "A Newly Designed Planar Stacked Capacitor Cell with High Dielectric Constant Film for 256 Mbit DRAM," IEEE, Dec. 5-8, 1993.
J. M. Molarius et al., "Tantalum-Based Encapsulants for Thermal Annealing of GaAs," Journal of the Electrochemical Society, vol. 138, No. 3, Mar. 1991, pp. 834-837.
H. Ichimura et al., "High-Temperature Oxidation of Ion-Plated TiN and TiAIN Films," J. Mater. Res., vol. 8, No. 5, May 1993, pp. 1093-1100.
E. Kolawa et al., "Amorphous Ta-Si-N Thin Films Alloys as Diffusion Barrier in Al/Si," J. Vac. Sci. Technol., A 8 (3), May/Jun. 1990, pp. 3006-3010.
M.-A. Nicolet et al., "Issues in Metal/Semiconductor Contact Design and Implementation," Solar Cells, 27 (1989) 177-189.
P. J. Pokela et al., "Characterization of the AL/Ta-Si-N/Au Metallization," Thin Solid Films, 203 (1991) 259-266.
L. E. Halperin, "Silicon Schottky Barriers and p-n Junctions with Highly Stable Aluminum Contact Metallization," IEEE Electron Device Letters, vol. 12, No. 6, Jun. 1991, pp. 309-311.
E. Kolawa, "Sputtered Ta-Si-N Diffusion Barriers in Cu Metallizations for Si," IEEE Electron Device Letters, vol. 12, No. 6, Jun. 1991, pp. 321-323.
P. J. Pokela et al., "Amorphous Ternary Ta-Si-N Diffusion Barrier Between Si and Au," J. Electrochem. Soc., vol. 138, No. 7, Jul. 1991, pp. 2125-2129.
E. Kolawa et al., "Amorphous Ta-Si-N Diffusion Barriers in Si/Al and Si/Cu Metallizations," Applied Surface Science, 53 (1991) 373-376.
P. J. Pokela et al., "Thermal Oxidation of Amorphous Ternary Ta.sub.36 Si.sub.14 N.sub.50 Thin Fims," J. Appl. Phys., 70(5), 1 Sep. 1991, pp. 2828-2832.
J. S. Reid et al., "Evaluation of Amorphous (Mo,Ta,W)-Si-N Diffusion Barriers for <Si>.vertline.Cu Metallization," Thin Solid Films

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