Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2008-07-08
2008-07-08
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S233100, C365S191000
Reexamination Certificate
active
07397712
ABSTRACT:
Some embodiments of the invention include a memory device having a number of data terminals for transferring data signals and a number of strobe terminals for transferring strobe signals representing timing information of the data. The strobe terminals have a fixed signal level in an inactive mode of the memory device. The memory further includes a controller for reducing signal instability of the strobe signals when the memory device switches from the inactive mode to a data transfer mode. Other embodiments are described and claimed.
REFERENCES:
patent: 6272070 (2001-08-01), Keeth et al.
patent: 6393062 (2002-05-01), Furman et al.
patent: 6445643 (2002-09-01), Keeth et al.
patent: 6450544 (2002-09-01), Becker et al.
patent: 6452938 (2002-09-01), Fawal et al.
patent: 6456544 (2002-09-01), Zumkehr
patent: 6466626 (2002-10-01), Cecchi
patent: 6483579 (2002-11-01), Koshikawa
patent: 6570406 (2003-05-01), Tang et al.
patent: 6697297 (2004-02-01), Keeth et al.
patent: 6704818 (2004-03-01), Martin et al.
patent: 6711597 (2004-03-01), O'Donnell
patent: 6759868 (2004-07-01), Helt et al.
patent: 6794900 (2004-09-01), Tang et al.
patent: 6807114 (2004-10-01), Keeth et al.
patent: 6819599 (2004-11-01), Schaefer
patent: 7092312 (2006-08-01), Choi et al.
patent: 2003/0080774 (2003-05-01), Funaba
patent: 2003/0212843 (2003-11-01), Molgaard
patent: 2004/0013182 (2004-01-01), Tonietto et al.
patent: 2004/0124891 (2004-07-01), De Laurentiis et al.
patent: 2004/0131058 (2004-07-01), Ghiasi
patent: 2005/0046441 (2005-03-01), Braceras et al.
patent: 2005/0141330 (2005-06-01), Shin
patent: 2005/0190635 (2005-09-01), Hargan
patent: 2006/0034134 (2006-02-01), Choi et al.
Choi Joo S
Sharma Yogesh
Elms Richard T.
Micro)n Technology, Inc.
Nguyen Dang
Schwegman Lundberg & Woessner, P.A.
LandOfFree
Pre-emphasis for strobe signals in memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Pre-emphasis for strobe signals in memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pre-emphasis for strobe signals in memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2808901