PRAMS having phase-change layer pattern with electrode...

Details PRAMS having phase-change layer pattern with electrode... PRAMS having phase-change layer pattern with electrode...

2007-05-08

2007-05-08

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257S751000, C257S296000, C438S253000, C438S095000, C438S391000

Reexamination Certificate

active

11217943

ABSTRACT:
According to some embodiments of the present invention, there are provided PRAMS having a phase-change layer pattern interposed between a molding layer and a forming layer pattern, and methods of forming the same that include a node conductive layer pattern, a molding layer, a forming layer pattern and a protecting layer. The molding layer, the forming layer pattern and the protecting layer are formed to cover the planarized interlayer insulating layer and the node conductive layer pattern. A lower electrode is interposed between the molding layer and the planarized interlayer insulating layer. A phase-change layer pattern is formed on the planarized interlayer insulating layer. A spacer pattern is disposed between the phase-change layer pattern and the molding layer.

REFERENCES:
patent: 6586761 (2003-07-01), Lowrey
patent: 6867425 (2005-03-01), Wicker
patent: 2002/0197566 (2002-12-01), Maimon et al.
patent: 2003/0071289 (2003-04-01), Hudgens et al.
patent: 2003/0201469 (2003-10-01), Lowrey
patent: 10-2004-0054250 (2004-06-01), None
English Translation of Korean Office Action for Korean Patent Application No. 10-2004-0070089 mailed on Apr. 25, 2006.
Korean Office Action for Korean Patent Application No. 10-2004-0070089 mailed on Apr. 25, 2006.

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