Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-03-20
1992-11-17
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257476, H01L 29784
Patent
active
051648024
ABSTRACT:
A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode.
REFERENCES:
patent: 4394590 (1983-07-01), Honda
patent: 4521795 (1985-06-01), Coe et al.
patent: 4590395 (1986-05-01), O'Connor et al.
patent: 4631564 (1986-12-01), Neilson et al.
patent: 4672245 (1987-06-01), Majumdar et al.
patent: 4801983 (1989-01-01), Ueno et al.
patent: 4811065 (1989-03-01), Cogan
patent: 4823172 (1989-04-01), Mihara
patent: 4893158 (1990-01-01), Mihara et al.
patent: 4967109 (1990-10-01), Steigerwald
Bernstein, Joseph B., "Design and Fabrication of a Vertical Power MOSFET with an Integral Driver", MIT, 1986 (Master's Thesis).
Jackoski Claire E.
Jones Frederick P.
Mansmann Jeffrey G.
Neilson John M. S.
Wrathall Robert S.
Harris Corporation
Larkins William D.
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