Power-up circuit in semiconductor memory device

Details Power-up circuit in semiconductor memory device Power-up circuit in semiconductor memory device

2005-11-01

2005-11-01

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S226000, C365S227000

Reexamination Certificate

active

06961270

ABSTRACT:
A power-up circuit includes a power supply voltage level follower unit for outputting a first bias voltage and a second bias voltage which increase or decrease in proportion to a power supply voltage; a first power supply voltage detecting unit for detecting a first critical voltage level where a logic level of a power-up signal is changed in response to the first bias voltage when the power supply voltage decreases; a second power supply voltage detecting unit for detecting a second critical voltage level where a logic level of the power-up signal is changed in response to the second bias voltage when the power supply voltage increases; and a trigger unit for inverting an output signal of the trigger unit in response to one of a first detect signal outputted from the first power supply voltage detecting unit when the power supply voltage decreases and a second detect signal outputted from the second power supply voltage detecting unit when the power supply voltage increases, wherein the second critical voltage level is higher than the first critical voltage level.

REFERENCES:
patent: 5345422 (1994-09-01), Redwine
patent: 5345424 (1994-09-01), Landgraf
patent: 5477176 (1995-12-01), Chang et al.
patent: 5510741 (1996-04-01), Childs
patent: 5557579 (1996-09-01), Raad et al.
patent: 5898635 (1999-04-01), Raad et al.
patent: 6157579 (2000-12-01), Micheloni et al.
patent: 6418075 (2002-07-01), Shimano et al.
patent: 6549481 (2003-04-01), McLaury
patent: 2002/0075745 (2002-06-01), McLaury
patent: 2003/0014620 (2003-01-01), Hanjani
patent: 2004/0012267 (2004-01-01), Kang
patent: 08-321758 (1996-03-01), None

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