Power trench transistor

Details Power trench transistor Power trench transistor

2005-10-31

2010-02-02

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

07655975

ABSTRACT:
A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.

REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 6359308 (2002-03-01), Hijzen et al.
patent: 6833584 (2004-12-01), Henninger et al.
patent: 2002/0185680 (2002-12-01), Henninger et al.
patent: 2003/0001215 (2003-01-01), Wahl et al.
patent: 2006/0006386 (2006-01-01), Hirler et al.
patent: 101 27 885 (2002-12-01), None
patent: 103 39 488 (2005-04-01), None

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