Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-30
2010-08-10
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257SE29201, C438S259000, C438S270000
Reexamination Certificate
active
07772642
ABSTRACT:
A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.
REFERENCES:
patent: 3257626 (1966-06-01), Marinace et al.
patent: 3900863 (1975-08-01), Kim
patent: 5814858 (1998-09-01), Williams
patent: 6316280 (2001-11-01), Fujiwara
patent: 6384955 (2002-05-01), Tada et al.
patent: 6548317 (2003-04-01), Taniguchi et al.
patent: 6653161 (2003-11-01), Morse
patent: 6673680 (2004-01-01), Calafut
patent: 6690062 (2004-02-01), Henninger et al.
patent: 6838722 (2005-01-01), Bhalla et al.
patent: 6861701 (2005-03-01), Williams et al.
patent: 2005/0161735 (2005-07-01), Aoki et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 112006003618 (2008-11-01), None
patent: 2007117312 (2007-10-01), None
PCT, International Search Report of The International Searching Authority for Application No. PCT/US2006-061423, Nov. 28, 2008.
PCT Written Opinion of The International Searching Authority for Applicaton No. PCT/US2006-061423, Nov. 28, 2008.
Fairchild Semiconductor Corporation
Pham Thanh V
Townsend and Townsend / and Crew LLP
LandOfFree
Power trench gate FET with active gate trenches that are... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power trench gate FET with active gate trenches that are..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power trench gate FET with active gate trenches that are... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4150615