Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-01-07
1999-11-09
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257335, H01L 2910
Patent
active
059819995
ABSTRACT:
A design for a trench DMOS transistor having improved current carrying capability is presented. The principal improvement lies in the periodic replacement of the individual cells in the array with a protection cell of a different size. When this is done it becomes possible to significantly increase the density of cells per unit area. This results in a corresponding improvement in the amount of channel area available to the device and hence an increase in its current carrying capability.
REFERENCES:
patent: 5410170 (1995-04-01), Bulucea et al.
patent: 5420450 (1995-05-01), Yoneda et al.
patent: 5468982 (1995-11-01), Hshieh et al.
patent: 5623152 (1997-04-01), Majumdav et al.
patent: 5629543 (1997-05-01), Hshieh et al.
patent: 5639676 (1997-06-01), Hshieh et al.
patent: 5682048 (1997-10-01), Shinohara et al.
patent: 5796125 (1998-08-01), Matsudai et al.
patent: 5844277 (1998-12-01), Hshieh et al.
patent: 5877528 (1999-03-01), So
patent: 5914503 (1999-06-01), Iwamuro et al.
Williams et al., A 1 Million-Cell 2.0 M-ohm 30-V Trench FET Utilizing 32 Mcell/in 2 Density with Distributed Voltage Clamping, IEDM 97 -- pp. 363-366.
Hung Chien-Chung
Kao Ming-Jer
Liu Chung-Min
Tsai Ming-Jinn
Yao June-Min
Ackerman Stephen B.
Industrial Technology Research Institute
Monin, Jr. Donald L.
Saile George O.
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