Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-01-21
1993-10-05
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257346, 257369, 257393, H01L 2910, H01L 2702, H01L 2906, H01L 2978
Patent
active
052508331
ABSTRACT:
A power transistor incorporated in an integrated circuit is fabricated on a lightly doped n-type well defined in a p-type semiconductor substrate, and comprises a lightly doped p-type region partially serving as a channel region, an heavily doped drain region formed in the lightly doped p-type region and contiguous to the channel region, and a source region formed in the lightly doped n-type well and spaced apart from the p-type region, a gate insulating film formed on the channel region, a gate electrode on the gate insulating film, and a heavily doped p-type ohmic contact region formed in the lightly doped p-type region for applying positive voltage to the lightly doped p-type region so that the power transistor is constructed as a double diffused MIS type field effect transistor, thereby controlling the back gate independent from the p-type semiconductor substrate.
NEC Corporation
Prenty Mark V.
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