Power transistor cell and power transistor component with...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S330000, C257S529000

Reexamination Certificate

active

11009537

ABSTRACT:
Transistor cells (2) of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode (52) in sections and is connected via a gate cell terminal (43) to a gate wiring line (81) led to a gate terminal (44) of the power transistor component (1). The gate conductor structure (5) has a desired fusible section (51) with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section (51) can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (41), the gate conductor section (5) is interrupted in the desired fusible section (51) and the gate electrode (52) is disconnected from the gate wiring line (81). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.

REFERENCES:
patent: 5021861 (1991-06-01), Baliga
patent: 5392187 (1995-02-01), Baliga
patent: 5446310 (1995-08-01), Baliga et al.
patent: 6080649 (2000-06-01), Werner et al.
patent: 6303980 (2001-10-01), Werner et al.
patent: 6524941 (2003-02-01), Hsu et al.
patent: 6756655 (2004-06-01), Le et al.
patent: 2002/0084508 (2002-07-01), Le et al.
patent: 196 00 398 (1997-03-01), None
patent: 199 26 107 (2000-11-01), None
patent: 0 852 396 (1998-07-01), None
patent: 2001 177093 (2001-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power transistor cell and power transistor component with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power transistor cell and power transistor component with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power transistor cell and power transistor component with... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3891986

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.