Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S529000
Reexamination Certificate
active
11009537
ABSTRACT:
Transistor cells (2) of a power transistor component are in each case provided with a gate conductor structure that forms a gate electrode (52) in sections and is connected via a gate cell terminal (43) to a gate wiring line (81) led to a gate terminal (44) of the power transistor component (1). The gate conductor structure (5) has a desired fusible section (51) with an increased resistance, which is arranged within a cavity. The resistance of the desired fusible section (51) can be set in such a way that, in the event of a current loading of the magnitude of a value that is typical of a defective gate dielectric (41), the gate conductor section (5) is interrupted in the desired fusible section (51) and the gate electrode (52) is disconnected from the gate wiring line (81). The power transistor component can be produced with high yield and has a smaller number of failures during application operation.
REFERENCES:
patent: 5021861 (1991-06-01), Baliga
patent: 5392187 (1995-02-01), Baliga
patent: 5446310 (1995-08-01), Baliga et al.
patent: 6080649 (2000-06-01), Werner et al.
patent: 6303980 (2001-10-01), Werner et al.
patent: 6524941 (2003-02-01), Hsu et al.
patent: 6756655 (2004-06-01), Le et al.
patent: 2002/0084508 (2002-07-01), Le et al.
patent: 196 00 398 (1997-03-01), None
patent: 199 26 107 (2000-11-01), None
patent: 0 852 396 (1998-07-01), None
patent: 2001 177093 (2001-06-01), None
Infineon - Technologies AG
Maginot Moore & Beck
Prenty Mark V.
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