Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-03
2009-10-06
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S502000, C257SE29189
Reexamination Certificate
active
07598567
ABSTRACT:
A semiconductor device includes a drift layer having a first conductivity type and a body region adjacent the drift layer. The body region has a second conductivity type opposite the first conductivity type and forms a p-n junction with the drift layer. The device further includes a contactor region in the body region and having the first conductivity type, and a shunt channel region extending through the body region from the contactor region to the drift layer. The shunt channel region has the first conductivity type. The device further includes a first terminal in electrical contact with the body region and the contactor region, and a second terminal in electrical contact with the drift layer. The shunt channel region has a length, thickness and doping concentration selected such that: 1) the shunt channel region is fully depleted when zero voltage is applied across the first and second terminals, 2) the shunt channel becomes conductive at a voltages less than the built-in potential of the drift layer to body region p-n junction, and/or 3) the shunt channel is not conductive for voltages that reverse biase the p-n junction between the drift region and the body region.
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Agarwal Anant
Hefner Allen
Ryu Sei-Hyung
Ahmed Selim
Cree Inc.
Myers Bigel & Sibley & Sajovec
Purvis Sue
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