Power switching MOS transistor

Details Power switching MOS transistor Power switching MOS transistor

1992-08-11

1994-03-29

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257630, 257652, 257399, H01L 2978, H01L 2348, H01L 2946, H01L 2954

Patent

active

052987701

ABSTRACT:
A power switching metal oxide semiconductor (PSMOS) transistor comprises a plurality of vertical double-diffused MOS (VDMOS) transistors formed on a semiconductive substrate of a first type conductivity and a device for bypassing avalanche carriers generated at the time of turning OFF the vertical double-diffused MOS transistors. The bypass device includes a first semiconductive region, which is spaced from the MOS transistor, of a second type conductivity formed on the semiconductor substrate and a conductive line for connecting the first semiconductive region to a source electrode of the MOS transistor.

REFERENCES:
patent: 4333225 (1982-06-01), Yeh
patent: 4801986 (1989-01-01), Chang et al.
patent: 4837606 (1989-06-01), Goodman et al.
patent: 5031009 (1991-07-01), Fujihira
patent: 5229642 (1953-07-01), Hara et al.

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