Power switch structure with low RDSon and low current limit...

Details Power switch structure with low RDSon and low current limit... Power switch structure with low RDSon and low current limit...

2007-06-12

2007-06-12

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257SE29257, C257SE21417

Reexamination Certificate

active

11105222

ABSTRACT:
In one embodiment, a power switch device (33) includes a first MOSFET device41and a second MOSFET device (42). A split gate structure (84) including a first gate electrode (48,87) controls the first MOSFET device (41). A second gate electrode (49,92) controls the second MOSFET device (42). A current limit device (38) is coupled to the first gate electrode (48,97) to turn on the first MOSFET device during a current limit mode. A comparator device (36) is coupled to the second gate electrode (49,92) to turn on the second MOSFET device (42) when the power switch device (33) is no longer in current limit mode.

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S. Gediga, R. Marquardt, R. Sommer, “High Power IGBT Converters with new Gate Drive and Protection Circuit”, EPE '95: 6th. European Conference on Power Electronics and Applications, Brussels, EPE Association, B, Conf. 6, Sep. 19, 1995, pp. 1066-1070.

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