Static information storage and retrieval – Powering
Patent
1995-10-31
1997-11-11
Fears, Terrell W.
Static information storage and retrieval
Powering
36518901, G11C 1300
Patent
active
056871287
ABSTRACT:
An active power supply voltage boosting circuit for a semiconductor memory device according to the present invention causes operation of the active cycle boosted voltage generating circuit to elevate the level of the boosted power supply voltage V.sub.PP when the detected level of the boosted power supply voltage V.sub.PP is lower than a target voltage level. Thus, the boosted power supply voltage V.sub.PP can be stably maintained to the target voltage level. When the boosted power supply voltage V.sub.PP becomes higher than the target voltage level, generation of the boosted power supply voltage V.sub.PP is stopped, and as a result, unwanted consumption of the electrical current and also the damage to the semiconductor memory device by high voltage can be prevented.
REFERENCES:
patent: 3942047 (1976-03-01), Buchanan
patent: 5245582 (1993-09-01), Kimura
K. Furutani et al.; "An Adjustable Output Driver with a Self-Recovering Vpp Generator for a 4M .times.16 DRAM"; IEEE Journal of Solid-State Circuits, vol. 29, No. 3, Mar. 1994.
Lee Jae-hyeong
Seok Yong-Sik
Fears Terrell W.
Samsung Electronics Co,. Ltd.
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