Power supply for an ion implantation system

Radiant energy – Irradiation of objects or material

Reexamination Certificate

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Details

C250S492200, C250S492220, C250S492300, C315S111810, C315S111910, C315S20000A, C315S205000, C427S523000, C219S121210, C363S017000, C200S002000

Reexamination Certificate

active

07576337

ABSTRACT:
A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

REFERENCES:
patent: 2823347 (1958-02-01), Procter
patent: 3418526 (1968-12-01), Simon et al.
patent: 3708740 (1973-01-01), Pierson
patent: 4733137 (1988-03-01), Dunham
patent: 4778975 (1988-10-01), Etarski et al.
patent: 5093646 (1992-03-01), Herbert
patent: 5231564 (1993-07-01), Pellegrino et al.
patent: 5350926 (1994-09-01), White et al.
patent: 5388607 (1995-02-01), Ramaker et al.
patent: 6348122 (2002-02-01), Wagner
patent: 2003/0058659 (2003-03-01), Klinkowstein
patent: 2005/0178981 (2005-08-01), Renau et al.
patent: 2007/0139976 (2007-06-01), deRochemont
patent: 2007/0235663 (2007-10-01), Low et al.
patent: 2008/0073578 (2008-03-01), Tekletsadik et al.
patent: 0753923 (1997-01-01), None
patent: 0973249 (2000-01-01), None
patent: 1209228 (1970-10-01), None
Reginato and Smith, “A 600 -κV, 10 -mA dc Cockcroft—Walton Rectifier using Silicon Diodes at 100κc”, IEEE Transactions on Nuclear Science, IEEE, p. 274-278, 1965.

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