Power semiconductor module

Details Power semiconductor module Power semiconductor module

2007-05-16

2009-10-27

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

C257S703000, C257S705000, C257S706000, C257S707000, C257S712000, C257S713000, C257SE23090, C257SE23038, C257SE23101

Reexamination Certificate

active

07608917

ABSTRACT:
A power semiconductor module and an inverter apparatus in which a device or a joining part is not mechanically damaged even when the temperature in use becomes a high temperature in the range of 175 to 250° C., resulting in excellent reliability at high temperature retaining test and thermal cycling test. Low thermal expansion ceramic substrates are disposed above and below the device. A material having a coefficient of thermal expansion of 10 ppm/K or less is disposed between the ceramic substrates. In addition, an inorganic material having a coefficient of thermal expansion in the range of 2 to 6 ppm/K or less is disposed around the device.

REFERENCES:
patent: 6201696 (2001-03-01), Shimizu et al.
patent: 6605868 (2003-08-01), Ishiwata et al.
patent: 6787900 (2004-09-01), Shinohara et al.
patent: 10-056131 (1998-02-01), None
patent: 2004-247383 (2004-09-01), None
patent: 2005-123233 (2005-05-01), None

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