Power semiconductor element capable of improving short...

Details Power semiconductor element capable of improving short... Power semiconductor element capable of improving short...

2005-05-17

2005-05-17

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S139000, C257S332000, C257S335000

Reexamination Certificate

active

06894347

ABSTRACT:
A semiconductor element including a first base layer of a first conductivity type; a second base layer of a second conductivity type formed selectively in one surface region of the first base layer; an emitter layer or a source layer of the first conductivity type formed selectively in a surface region of the second base layer; and a gate electrode formed on that portion of the second base layer which is positioned between the emitter layer or source layer and the first base layer with a gate insulating film interposed between the gate electrode and the second base layer. A channel region is formed in contact with the gate insulating film to permit a carrier to migrate between the emitter layer or source layer and the first base layer. The channel region has an impurity concentration profile such that the impurity concentration is substantially constant along the gate insulating film and in the direction in which the emitter layer or source layer, the second base layer and the first base layer are formed.

REFERENCES:
patent: 5895939 (1999-04-01), Ueno
patent: 6001678 (1999-12-01), Takahashi
patent: 6060731 (2000-05-01), Murata et al.
patent: 6380586 (2002-04-01), Yoshikawa
patent: 6501128 (2002-12-01), Otsuki
patent: 9-36359 (1997-02-01), None

Affiliated with

Also associated with

Rating

Power semiconductor element capable of improving short... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor element capable of improving short..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor element capable of improving short... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3462674