Power semiconductor devices with mesa structures and buffer...

Details Power semiconductor devices with mesa structures and buffer... Power semiconductor devices with mesa structures and buffer...

2008-09-09

2010-11-23

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Mesa or stacked emitter

C438S039000, C438S041000, C438S496000, C438S571000, C438S586000, C257S170000, C257S542000, C257S466000, C257S618000, C257S623000, C257SE29185, C257SE29321, C257SE21377

Reexamination Certificate

active

07838377

ABSTRACT:
A bipolar junction transistor includes a collector having a first conductivity type, a drift layer having the first conductivity type on the collector, a base layer on the drift layer and having a second conductivity type opposite the first conductivity type, a lightly doped buffer layer having the first conductivity type on the base layer and forming a p-n junction with the base layer, and an emitter mesa having the first conductivity type on the buffer layer and having a sidewall. The buffer layer includes a mesa step adjacent to and spaced laterally apart from the sidewall of the emitter mesa, and a first thickness of the buffer layer beneath the emitter mesa is greater than a second thickness of the buffer layer outside the mesa step.

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