Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-12-30
1998-05-19
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257341, 257345, 257401, H01L 2974
Patent
active
057539421
ABSTRACT:
Power semiconductor devices have a plurality of arcuate-shaped source regions arranged in a row along a serpentine-shaped insulated gate electrode and at least one bypass region for collectively inhibiting parasitic thyristor latch-up. These power semiconductor devices include a semiconductor substrate containing a drift region of first conductivity type therein extending to a first face thereof and a base region of second conductivity type in the drift region. The base region is preferably formed to have a perimeter which defines a large area P-N junction with the drift region. A plurality of arcuate-shaped source regions of first conductivity type are also provided in the base region. The source regions are defined by respective perimeters containing concave-shaped segments which are spaced from the perimeter of the base region. A serpentine-shaped insulated gate electrode is also provided so that inversion-layer channels of first conductivity type can be formed in the base region to electrically connect the source regions to the drift region, upon the application of a first potential bias (e.g., positive) thereto. The plurality of arcuate-shaped source regions may be arranged as a row of arcuate-shaped source regions spaced end-to-end in the base region along the length of the serpentine-shaped insulated gate electrode.
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Prenty Mark V.
Samsung Electronics Co,. Ltd.
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