Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-25
2008-12-16
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S499000, C257S500000, C257SE29019, C257SE21544
Reexamination Certificate
active
07465986
ABSTRACT:
A power semiconductor device includes a plurality of trenches formed within a semiconductor body, each trench including one or more electrodes formed therein. In particular, according to embodiments of the invention, the plurality of trenches of a semiconductor device may include one or more gate electrodes, may include one or more gate electrodes or one or more source electrodes, or may include a combination of both gate and source electrodes formed therein. The trenches and electrodes may have varying depths within the semiconductor body.
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Search Report and Office Action issued by the Taiwanese Patent Office in corresponding Taiwanese Application No. 94129325 dated Jan. 2008.
Girdhar Dev Alok
Jones David Paul
Ma Ling
Peake Steven T.
Armand Marc
International Rectifier Corporation
Louie Wai-Sing
Ostrolenk Faber Gerb & Soffen, LLP
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