Power semiconductor device having RESURF layer

Details Power semiconductor device having RESURF layer Power semiconductor device having RESURF layer

2005-07-19

2005-07-19

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000

Reexamination Certificate

active

06919610

ABSTRACT:
A semiconductor device including a drain layer having a first conductivity type, a drift layer having the first conductivity type, which is formed on the drain layer and has an impurity concentration lower than that in the drain layer, and a RESURF layer having a second conductivity type and formed to extend from a surface of the drift layer into the drain layer, the RESURF layer forming a superjunction structure together with the drift layer and forming a depletion layer in the drift layer.

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