Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-04-09
1994-06-28
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257133, 257170, 257173, 257339, 257341, 257356, 257367, 257409, 257490, 257495, H01L 2910, H01L 2906, H01L 2978
Patent
active
053249712
ABSTRACT:
A semiconductor body (2) has adjacent a first major surface (3) a first region (5) of one conductivity type part of which defines an active device area (6) of a power semiconductor device (7) having at least two electrodes (8 and 9 or 8 and 10) and active device regions (11) each forming with the first region (5) a pn junction (11a) extending to the first major surface (3). A protection device (12) formed by a series-connected array of semiconductor rectifying elements (13) is provided on an insulating layer (14) on the first major surface (3). The protection device (12) is connected between at least two electrodes (8 and 9 or 10) of the power semiconductor device (7) so as to break down to cause conduction between the two electrodes when the voltage across the protection device (12) exceeds a predetermined limit. The active device area (6) is surrounded by field relief means (20) including at least one field relief area (21) extending along the first major surface (3) for causing electric fields within the active device area (6) to spread laterally outwardly of the active device area (6) so as to increase the breakdown voltage of the power semiconductor device (7). The protection device (12) is provided adjacent the field relief means (20) so that the array of rectifying elements (13) extends across the field relief areas (21) thereby enabling the protection device (12) to influence voltages at the field relief area.
REFERENCES:
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4567502 (1986-01-01), Nakagawa et al.
patent: 4707719 (1987-11-01), Whight
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 5128730 (1992-07-01), Coe et al.
patent: 5162966 (1992-11-01), Fujihira
Biren Steven R.
Ngo Ngan
U.S. Philips Corporation
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