Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-21
1998-09-08
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257357, 257358, H01L 2362
Patent
active
058048596
ABSTRACT:
A semiconductor device having an input terminal and an output terminal includes at least one high power device for supplying output current as an output section, and over-current limiting circuits, each including a over-current detection circuit, for limiting the amount of each current flowing through a plurality of bonding wires by which the output terminal is connected to an external terminal, to a current value of a desired amount or less. Thereby, an over-current condition where the current value is over an allowable current value, is avoided and blowing the bonding wire of the device can be prevented.
REFERENCES:
patent: 5530271 (1996-06-01), Fallica
patent: 5581103 (1996-12-01), Mizukami
Takagi Yosuke
Takahashi Hitoshi
Kabushiki Kaisha Toshiba
Whitehead Carl W.
LandOfFree
Power semiconductor device having over-current protection does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor device having over-current protection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device having over-current protection will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1284214