Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2002-12-30
2003-11-04
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S288000, C257S678000, C257S690000
Reexamination Certificate
active
06642576
ABSTRACT:
TITLE OF THE INVENTION
Power Semiconductor Device Having Layered Structure of Power Semiconductor Elements and Terminal Members
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a power semiconductor device, and more particularly to a technique to eliminate wire connection and solve problems caused by the wire connection.
2. Description of the Background Art
There is a need, recently, for a downsized and lightweight, low-cost and high-quality power semiconductor device. Though high quality generally costs a lot, it is desired to ensure high quality with cost reduction.
FIGS. 26 and 27
are schematic plan view and cross section illustrating a power semiconductor device
51
P in the background art. Herein, as an example of the background-art power semiconductor device
51
P, one-phase structure (one arm) of a three-phase inverter is taken. For simple illustration, a case body (resin member) is omitted in
FIGS. 26 and 27
.
In the background-art power semiconductor device
51
P, metal layers
152
P and
153
P made of, e.g., copper or aluminum are disposed on both main surfaces of a radiating insulating substrate
151
P made of, e.g., ceramic. The insulating substrate
151
P is adhered onto a metal radiator plate (not shown) made of, e.g., copper or aluminum with solder.
On each metal layer
152
P, IGBTs
121
P and
122
P and free wheeling diodes
131
P and
132
P are disposed (four power semiconductor elements
121
P,
122
P,
131
P and
132
P are disposed on a plane), being in an electric contact with the metal layer
152
P. Wires
154
P made of aluminum or gold establish connection between a pair of power semiconductor elements
121
P and
131
P and between another pair of power semiconductor elements
122
P and
132
P. Further, the power semiconductor elements
121
P,
122
P,
131
P and
132
P are connected to the metal layer
152
P and terminals
155
P and
155
PP with the wires
154
P. The metal layer
152
P and a terminal
155
NP are connected to each other with the wires
154
P. The terminals
155
NP and
155
PP are connected to low potential (power-supply ground potential) and high potential, respectively.
A case (now shown) is so arranged as to house the power semiconductor elements
121
P,
122
P,
131
P and
132
P and filled with epoxy resin. At this time, in some cases, the power semiconductor elements
121
P,
122
P,
131
P and
132
P are sealed by silicone gel and the epoxy resin fills thereon.
The background-art power semiconductor device
51
P has the following problems caused by the wires
154
P.
First, disconnection is disadvantageously caused by a break of the wire
154
P. For example, when the power semiconductor device
51
P is used in automobile, motorbike, train or the like, vibrations sometimes cause a crack in a neck portion of a wire, resulting in disconnection.
Further, the need for providing connecting portions of the wires
154
P causes upsizing of the power semiconductor device
51
P.
Furthermore, a voltage drop of the wire
154
P causes a power loss.
SUMMARY OF THE INVENTION
It is a main object of the present invention to provide a power semiconductor device having no wire connection.
According to the present invention, a power semiconductor device includes first to third terminal members, at least one first power semiconductor element, and at least one second power semiconductor element. The first to third terminal members each include an element arrangement portion having first and second main surfaces which are opposed to each other. The at least one first power semiconductor element has first and second main surfaces which are opposed to each other and first and second main electrodes provided on the first and second main surfaces, respectively. The at least one second power semiconductor element has first and second main surfaces which are opposed to each other and first and second main electrodes provided on the first and second main surfaces, respectively. The at least one first power semiconductor element has the same structure as the at least one second power semiconductor element. The second main surface in the element arrangement portion of the first terminal member is joined to the first main electrode of the at least one first power semiconductor element. The second main electrode of the at least one first power semiconductor element is joined to the first main surface in the element arrangement portion of the second terminal member. The second main surface in the element arrangement portion of the second terminal member is joined to the first main electrode of the at least one second power semiconductor element. The second main electrode of the at least one second power semiconductor element is joined to the first main surface in the element arrangement portion of the third terminal member. The power semiconductor device further includes a package for housing the at least one first power semiconductor element and the at least one second power semiconductor element. The first to third terminal members each have an external connection portion drawn out of the package.
Since the terminal members and the power semiconductor elements are alternately layered, being joined to one another, and the external connection portions of the terminal members are drawn out of the package, it is possible to provide a power semiconductor device having no wire connection. Therefore, according to the power semiconductor device of the present invention, it is possible to solve the problems caused by the wire connection. Further, while a manufacturing time becomes longer as the number of wires (depending on the current rating) increases, the power semiconductor device of the present invention has a structure in which the terminal members and the power semiconductor elements are joined to one another regardless of the current rating and thereby shows outstanding productivity. Furthermore, such a structure as discussed above in which the terminal members and the power semiconductor elements are alternately layered ensures downsizing. Moreover, since the first power semiconductor element and the second power semiconductor element have the same structure and there is no need for preparing any power semiconductor element of different structure, it is possible to reduce the cost.
Koutake Yasuo
Shirasawa Takaaki
Takayama Tsuyoshi
Tsuji Natsuki
LandOfFree
Power semiconductor device having layered structure of power... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Power semiconductor device having layered structure of power..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device having layered structure of power... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3113701