Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-04-29
1997-11-11
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257337, 257339, H01L 2976, H01L 2994, H01L 31062
Patent
active
056867506
ABSTRACT:
A vertical field effect transistor comprises a MOSFET cell zone which is formed in a principal surface of an N-type semiconductor substrate and in which a plurality of MOSFET cells are formed and connected in parallel with one another. A gate electrode pad and a source electrode pad are formed in the principal surface of the semiconductor substrate, separately from the MOSFET cell zone. A drain electrode pad is formed on a rear surface of the semiconductor substrate. A plurality of diodes are formed in the principal surface of the semiconductor substrate and arranged to form at least one array of diodes along an outer periphery of the MOSFET cell zone. An N-type region of each of the diodes is formed of the N-type semiconductor substrate itself and a P-type region of each of the diodes is connected to an electrode which is connected to a source electrode of the MOSFET cells.
REFERENCES:
patent: 5170241 (1992-12-01), Yoshimura et al.
patent: 5184204 (1993-02-01), Mihara et al.
patent: 5191395 (1993-03-01), Nishimura
patent: 5430314 (1995-07-01), Yilmaz
Koshiba & Partners
Loke Steven H.
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