Power semiconductor device having improved performance and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S328000, C257S341000, C257S342000, C257SE29027, C257SE29066, C257SE29121

Reexamination Certificate

active

07732862

ABSTRACT:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes an offset body region.

REFERENCES:
patent: 6197640 (2001-03-01), Davies
patent: 6870221 (2005-03-01), Venkatraman
patent: 2005/0121720 (2005-06-01), Sin et al.
patent: 2004/053999 (2004-06-01), None

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