Power semiconductor device having improved performance and...

Details Power semiconductor device having improved performance and... Power semiconductor device having improved performance and...

2005-04-25

2008-11-04

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S329000, C257S900000, C257S401000, C257SE29263, C438S197000, C438S184000, C438S230000, C438S303000, C438S595000

Reexamination Certificate

active

07446354

ABSTRACT:
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a counter-doped drain region spaced apart from a channel region.

REFERENCES:
patent: 5369045 (1994-11-01), Ng et al.
patent: 6268626 (2001-07-01), Jeon
patent: 6303961 (2001-10-01), Shibib
patent: 6803317 (2004-10-01), Grivna
patent: 2002/0100936 (2002-08-01), Frisina et al.
patent: 2006/0220151 (2006-10-01), Loechelt et al.

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