Power semiconductor device having high breakdown voltage,...

Details Power semiconductor device having high breakdown voltage,... Power semiconductor device having high breakdown voltage,...

2005-08-16

2005-08-16

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

06930356

ABSTRACT:
In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.

REFERENCES:
patent: 4987098 (1991-01-01), Nishiura et al.
patent: 6093948 (2000-07-01), Zambrano et al.

Affiliated with

Also associated with

Rating

Power semiconductor device having high breakdown voltage,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power semiconductor device having high breakdown voltage,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power semiconductor device having high breakdown voltage,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3512185