Power semiconductor device having an active layer

Details Power semiconductor device having an active layer Power semiconductor device having an active layer

1995-11-29

1998-01-13

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257552, 257553, 257554, 257556, 257577, H01L 2701, H01L 2712, H01L 310392

Patent

active

057082871

ABSTRACT:
An n.sup.- -type silicon active layer having a thickness of 6 .mu.m or less is formed on a silicon substrate via a silicon oxide film. An npn bipolar transistor with a low withstand voltage and an IGBT with a high withstand voltage are formed in the active layer. The two devices are insulated and isolated from each other through a trench. The bipolar transistor has an n-type well layer formed in the surface of the active layer. A p-type well layer is formed in the surface of the n-type well layer. The thickness of the n-type well layer under the p-type well layer is set to be 1 .mu.m or more. A first n.sup.+ -type diffusion layer is formed in the surface of the n-type well layer. A p.sup.+ -type diffusion layer and a second n.sup.+ -type diffusion layer are formed in the surface of the p-type well layer. The n-type well layer and the first n.sup.+ -type diffusion layer serve as a collector region. The p-type well layer and the p.sup.+ -type diffusion layer serve as a base region. The second n.sup.+ -type diffusion layer serves as an emitter region.

REFERENCES:
patent: 4478655 (1984-10-01), Nagakubo et al.
patent: 4843448 (1989-06-01), Garcia et al.
patent: 4982263 (1991-01-01), Spratt et al.
patent: 5102809 (1992-04-01), Eklund et al.
patent: 5126806 (1992-06-01), Sakurai et al.
patent: 5212397 (1993-05-01), See et al.
patent: 5323055 (1994-06-01), Yamasaki
patent: 5371401 (1994-12-01), Kurita
patent: 5448104 (1995-09-01), Yallup
patent: 5510647 (1996-04-01), Nakajima et al.
1992 IEDM Technical Digest, "Self-Heating In High Performance Bipolar Transistors Fabricated on SOI Substrates", P.R. Ganci, et al., (pp. 417-420), 1992 No Month.
Proceedings of 1990 International Symposium on Power Semiconductor Devices & ICs, "New 500V Output Device Structures for Thin Silicon Layer on Silicon Dioxide Film", (pp. 97-101), A. Nakagawa, et al., 1992 No Month.

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