Power semiconductor device having...

Details Power semiconductor device having... Power semiconductor device having...

2005-08-09

2005-08-09

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S330000, C257S332000, C257S344000, C257S365000

Reexamination Certificate

active

06927455

ABSTRACT:
A first insulator (710) having an opening within a central region (551) is formed on a main surface (61S) of an epitaxial layer (610). Then, p-type impurities are ion implanted through the opening of the first insulator (710) and then heat treatment is carried out, thereby to form a p base layer (621) in the main surface (61S). An insulating film is formed to fill in the opening and then etched back, thereby to form a second insulator (720) on a side surface (71W) of the first insulator (710). Under conditions where the second insulator (720) is present, n-type impurities are ion implanted through the opening and then heat treatment is carried out, thereby to form an n+source layer (630) in the main surface (61S) of the p base layer (621).

REFERENCES:
patent: 4135955 (1979-01-01), Gasner et al.
patent: 5801417 (1998-09-01), Tsang et al.
patent: 6188105 (2001-02-01), Kocon et al.
patent: 6627950 (2003-09-01), Bulucea et al.
patent: WO99/12214 (1999-03-01), None
S. Wolf, “Silicon Processing for the VLSI Era, vol. 2—Process Integration,” Lattice Press, Sunset Beach, CA (1990), pp. 5-6.

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