Power semiconductor device and power semiconductor module

Details Power semiconductor device and power semiconductor module Power semiconductor device and power semiconductor module

2006-12-12

2006-12-12

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

With heat sink means

C257S676000, C257S691000, C257S706000, C257SE23051, C257S723000, C257SE23075

Reexamination Certificate

active

07148562

ABSTRACT:
A plurality of power semiconductor chips (power transistors or the like) are arranged, being separated from each other with a free space of a terminal board interposed therebetween. A radiating block is in contact with an insulating layer (a package and grease below the terminal board) below an arrangement region of each of the power semiconductor devices and a region between power semiconductor devices, and this increases a heat dissipation effect. With this construction, it is possible to provide a power semiconductor device and a power semiconductor module which ensure an excellent dissipation effect of heat radiated in operation of the power semiconductor chips.

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