Power semiconductor device and power conversion device using...

Details Power semiconductor device and power conversion device using... Power semiconductor device and power conversion device using...

2007-03-09

2009-12-29

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29198

Reexamination Certificate

active

07638839

ABSTRACT:
A power semiconductor device having a low loss and a high reliability and a power conversion device using the power semiconductor device are provided. In the power semiconductor device, a plurality of MOS type trench gates are positioned to be spaced by at-least two types of intervals therebetween, a low-resistance floating n+layer is positioned on a main surface of a semiconductor substrate adjacent to a floating p layer positioned between the adjacent MOS type trench gates having the broad interval to achieve consistency between a low output value and a high breakdown resistance.

REFERENCES:
patent: 6683343 (2004-01-01), Matsudai et al.
patent: 2004/0207009 (2004-10-01), Yamaguchi et al.
patent: 2000-307116 (2000-11-01), None
patent: 2000-311998 (2000-11-01), None

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