Power semiconductor device and method of manufacturing the same

Details Power semiconductor device and method of manufacturing the same Power semiconductor device and method of manufacturing the same

2005-05-03

2005-05-03

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257S412000

Reexamination Certificate

active

06888206

ABSTRACT:
An n-type substrate surface and a p+ region are provided adjacent to each other, on upper surfaces of which an insulation film, a shield and a conductor are formed in this order. The shield is connected to the conductor. The shield and the conductor are insulated from the n-type substrate surface by the insulation film. Even when polarization occurs in a mold provided over a semiconductor device due to a potential distribution along the substrate surface of the semiconductor device, the conductive shield can prevent the substrate from being affected by the polarization in the mold, allowing avoidance of an adverse influence of deterioration in breakdown voltage and the like.

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IBM Tech Disc Bul, #77044099, vol. 19, No. 11, pp. 4099-5000, Apr. 1977.

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