Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-16
1999-07-27
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257329, 257330, 257331, 257332, 257333, 257334, 257340, H01L 21324
Patent
active
059294825
ABSTRACT:
An n.sup.+ semiconductor substrate (1) using a silicon wafer as a base material and including As includes oxygen of which the concentration is in the range of 12E17 atoms/cm.sup.3 to 20E17 atoms/cm.sup.3. The first epitaxial growth layer (2) of n type and a diffusion layer (3) of p type are formed in sequence on the second major surface (1S2) of the semiconductor substrate (1). The thickness of an epitaxial a growth layer (10) is set to be not more than 20 .mu.m. A trench (6) is formed so as to extend from a surface of the diffusion layer (3) to the inside of the first epitaxial growth layer (2). A gate oxide film (5) is formed on a bottom surface (6B) and a wall surface (6W) of the trench (6) and a conductive layer (11) fills the trench (6). An n-type source layer (4) is formed at a corner (6C) of the trench (6). After that, predetermined electrodes are formed and so on, to complete a device. With this structure, it is possible to reduce a leak current, prevent deterioration in main breakdown voltage and stabilize gate-oxide-film breakdown-voltage characteristics in a vertical MOSFET with trench gate.
REFERENCES:
patent: 4236166 (1980-11-01), Cho et al.
patent: 4771013 (1988-09-01), Curran
patent: 5015593 (1991-05-01), Yawata et al.
patent: 5308789 (1994-05-01), Yoshimura et al.
Kawakami Minoru
Souno Hidetoshi
Yamashita Yasunori
Yano Mitsuhiro
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
Ryoden Semiconductor System Engineering Corporation
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