Power semiconductor device and manufacturing method of the same

Details Power semiconductor device and manufacturing method of the same Power semiconductor device and manufacturing method of the same

2008-06-04

2010-11-02

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S287000, C257S241000, C257S173000, C257S355000

Reexamination Certificate

active

07825480

ABSTRACT:
The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.

REFERENCES:
patent: 7172941 (2007-02-01), Inagawa et al.
patent: 2005/0029584 (2005-02-01), Shiraishi et al.
patent: 2005-057050 (2005-03-01), None
S.M.Sze. Semiconductor Devices. Physics and Technology. 2nd Edition, p. 187, subchapter 6.2.1, line 7. (C) Wiley and Sons, 2002.

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