Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-12
2011-10-04
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S287000, C257S401000, C257S500000, C257SE29256
Reexamination Certificate
active
08030706
ABSTRACT:
A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately arranged along a direction parallel to a surface of the first semiconductor layer, wherein the device part is provided with a first region and a second region, each of which includes at least one of the second semiconductor layers and at least one of the third semiconductor layers, and with regard to a difference value ΔN (=NA−NB) obtained by subtracting an impurity amount NBper unit length of each of the third semiconductor layers from an impurity amount NAper unit length of each of the second semiconductor layers, a difference value ΔNC1which is the difference value ΔN in the first region of the device part, a difference value ΔNC2which is the difference value ΔN in the second region of the device part, and a difference value ΔNTwhich is the difference value ΔN in the terminal part satisfy a relationship of ΔNC1>ΔNT>ΔNC2.
REFERENCES:
patent: 2008/0211020 (2008-09-01), Saito
patent: 2008/0246079 (2008-10-01), Saito et al.
patent: 2004-134714 (2004-04-01), None
patent: 2006-324432 (2006-11-01), None
Hatano Nana
Izumisawa Masaru
Ohta Hiroshi
Ono Syotaro
Saito Wataru
Kabushiki Kaisha Toshiba
Patterson & Sheridan LLP
Tran Tan N
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