Power semiconductor device

Details Power semiconductor device Power semiconductor device

2007-03-29

2010-10-19

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000, C257S328000, C257S288000, C257S302000, C257S341000, C257S342000, C257SE29021, C257SE29027

Reexamination Certificate

active

07816756

ABSTRACT:
A power semiconductor device includes: a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on a first semiconductor layer and alternately arranged along at least one direction parallel to an upper face of the first semiconductor layer; a fourth semiconductor layer of the second conductivity type selectively formed in an upper face of the second and third semiconductor layers; and a control electrode formed above the second, third and fourth semiconductor layers via a gate insulating film. The control electrode includes: first portions periodically arranged along a first direction selected from arranging directions of the third semiconductor layer, the third semiconductor layer has a shortest arrangement period in the first direction, and second portions periodically arranged along a second direction, the second direction being parallel to the upper face of the first semiconductor layer and crossing the first direction. The arrangement period of the first portions is m times the arrangement period of the third semiconductor layer, where m is an integer not less than 2.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 6081009 (2000-06-01), Neilson
patent: 6693338 (2004-02-01), Saitoh et al.
patent: 6849880 (2005-02-01), Saito et al.
patent: 6888195 (2005-05-01), Saito et al.
patent: 6919610 (2005-07-01), Saitoh et al.
patent: 2005/0133859 (2005-06-01), Kuwahara et al.
patent: 2006/0220156 (2006-02-01), Saito et al.
patent: 2003-101022 (2003-04-01), None
patent: 20040119611 (2004-04-01), None
U.S. Appl. No. 12/050,405, filed Mar. 18, 2008, Saito, et al.

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