Power semiconductor device

Details Power semiconductor device Power semiconductor device

2005-12-07

2010-02-02

Chu, Chris C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257SE25027, C257S685000, C257S706000, C257S707000, C342S372000, C165S080400

Reexamination Certificate

active

07656016

ABSTRACT:
One of the aspects of the present invention is to provide a power semiconductor device, which includes at least one pair of power modules, each of which has a molding surface covered with molding resin and a radiating surface opposite to the molding surface. Also, the power semiconductor device includes a pair of radiating fins sandwiching the power modules such that the molding surfaces of the power modules contact each other and the radiating surfaces thereof each contact the radiating fins.

REFERENCES:
patent: 3784885 (1974-01-01), Weidemann
patent: 4192565 (1980-03-01), Gianni
patent: 4392153 (1983-07-01), Glascock et al.
patent: 4878106 (1989-10-01), Sachs
patent: 5050037 (1991-09-01), Yamamoto et al.
patent: 5060112 (1991-10-01), Cocconi
patent: 5615475 (1997-04-01), Burns
patent: 5726493 (1998-03-01), Yamashita et al.
patent: 5770888 (1998-06-01), Song et al.
patent: 5801437 (1998-09-01), Burns
patent: 6144571 (2000-11-01), Sasaki et al.
patent: 6377461 (2002-04-01), Ozmat et al.
patent: 6380622 (2002-04-01), Hirai et al.
patent: 6442023 (2002-08-01), Cettour-Rose et al.
patent: 6442033 (2002-08-01), Liu et al.
patent: 6542365 (2003-04-01), Inoue
patent: 6635970 (2003-10-01), Lasky et al.
patent: 6870271 (2005-03-01), Sutherland et al.
patent: 6917103 (2005-07-01), Hirano et al.
patent: 7015578 (2006-03-01), Nakamura et al.
patent: 7129583 (2006-10-01), Tao et al.
patent: 2004/0159962 (2004-08-01), Ishiyama
patent: 2 855 652 (2004-12-01), None
patent: 6-24279 (1994-02-01), None
patent: 2002-216860 (2002-08-01), None
patent: 2003-333702 (2003-11-01), None
patent: 2003-338592 (2003-11-01), None
patent: 2004-215340 (2004-07-01), None
Translation of a German Office Action, dated Jul. 15, 2008, for German Application No. 102005057981.7.
German Office Action, Jan. 29, 2007.

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