Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2007-02-13
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S341000, C257SE29201
Reexamination Certificate
active
10834842
ABSTRACT:
A power semiconductor device comprises a semiconductor layer; a polysilicon-containing gate; a first semiconductor region formed in said semiconductor layer at one surface of said semiconductor layer and operative to serve as at least one of a source region and an emitter region; a second semiconductor region formed in said semiconductor layer at the other surface of said semiconductor layer and operative to serve as at least one of a drain region and a collector region; a gate routing wire commonly connected to a plurality of said gates and including a polysilicon portion and a metal portion formed adjacent to it in the direction of plane of said semiconductor layer; an interlayer insulator film formed to cover said first semiconductor region, said gate routing wire and a plurality of said gates; an electrode portion formed in said interlayer insulator film and connected to said first semiconductor region; and a strap electrode plate located to cover said interlayer insulator on said gate routing wire and cover a plurality of said electrode portions and commonly connected to a plurality of said electrode portions.
REFERENCES:
patent: 6930355 (2005-08-01), Matsuki et al.
patent: 7-45817 (1995-02-01), None
Ebuchi Yasuo
Kawamura Keiko
Matsuda Noboru
Díaz José R.
Jackson Jerome
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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