Power semiconductor device

Details Power semiconductor device Power semiconductor device

2007-10-02

2007-10-02

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000, C257S329000, C257S335000, C257S341000, C257S345000

Reexamination Certificate

active

11117342

ABSTRACT:
A power semiconductor device includes second semiconductor layers of a first conductivity type and third semiconductor layers of a second conductivity type alternately disposed on a first semiconductor layer of the first conductivity type. The device further includes fourth semiconductor layers of the second conductivity type disposed in contact with upper portions of the third semiconductor layers between the second semiconductor layers, and fifth semiconductor layers of the first conductivity type formed in surfaces of the fourth semiconductor layers. The first semiconductor layer is lower in impurity concentration of the first conductivity type than each second semiconductor layer. The third semiconductor layer includes a fundamental portion and an impurity-amount-larger portion formed locally in a depth direction and higher in impurity amount than the fundamental portion. The impurity amount is defined by a total amount of impurities of the second conductivity type over a cross section in a lateral direction.

REFERENCES:
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U.S. Appl. No. 11/117,342, filed Apr. 29, 2005, Saito et al.
U.S. Appl. No. 11/668,861, Jan. 30, 2007, Saito et al.
U.S. Appl. No. 11/265,294, filed Nov. 03, 2005, Saito et al.

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